Hafnium Informationen, einschließlich Technische Daten, Safety Data und seine Eigenschaften, Forschung, Anwendungen und andere nützliche Fakten sind erörtert werden. Wissenschaftliche Fakten, wie die atomare Struktur, Ionisierungenergie, Fülle auf der Erde, Leitfähigkeit und thermischen Eigenschaften sind im Preis inbegriffen.
Hafnium is one of the Group IV transition elements that is refined from various zirconic mineral deposits. Hafnium ist als Metall und Verbindungen mit Reinheiten von 99% auf 99,999% (ACS Note in höchster Reinheit); Metalle in Form von Folien, Sputtern Ziel, und Stab, und Verbindungen, wie Submikron- und Nanopuder-Verarbeitung. It's primary uses are due to its ability as a nuclear "getter" or absorber of neutrons. It is a primary component in nuclear control rods for this purpose. It also finds uses as a dopant in the alloy of steel and titanium. It is also used in the production of mantles for high intensity incandescent lamps. Hafnium is replacing polysilicon as the principle gate or electrode material in metal oxide semiconductor field effect transistors (MOSFETs) which are the basis for all modern semiconductors. As semiconductors have gotten smaller, the limiting factor in further size reduction has been the ability of the silicon oxide gate to perform below 10 angstroms where leakage occurs. Recent research has been devoted to the development of High-k materials which can function as a di-electric barrier or gate with lower leakage. Using hafnium based alloys as this di-electric gate has allowed for the development of MOSFET gates smaller than 10 angstroms. This allows for further size reduction, reduced switching power requirements and improved performance. Hafnium Tatsachen, einschließlich Aussehen, CAS #, und molekularen Formel und Sicherheit, Forschung und Eigenschaften sind
Oxide sind in Formen einschließlich Pulvern und dichten Pellets für die Verwendung als optische Beschichtung und dünnen Film. Oxide sind in der Regel unlöslich. Fluoride sind ein weiteres unlöslichen Form für Anwendungen, in denen Sauerstoff unerwünscht wie Metallurgie, der chemischen und physikalischen Aufdampfung und in Einige optische Beschichtungen. Hafnium ist in löslicher einschließlich Chloride, Nitrate und Acetate. Diese Verbindungen hergestellt werden, sind auch Lösungen in bestimmten stoichiometries. Hafnium is a Block D, Group 4, Period 6 element. The electronic configuration is [Xe] 4f14 5d2 6s2. In its elemental form hafnium's CAS number is 7440-58-6. The hafnium atom has a radius of 156.4.pm and it's Van der Waals radius is 200.pm.Alle elementare Metalle, Verbindungen und Lösungen können synthetisiert werden in einer sehr hoher Reinheit (eg 99,999%) für Labor, fortgeschrittene elektronische, Metallurgie und optischen Materialien und andere hohe Technologie Vorteile. Information ist für einen stabilen (nicht radioaktiven) Isotopen. Organo - Metallic Hafnium Verbindungen sind löslich in organischen oder nicht wässrigen Lösungsmitteln. Siehe Analytical Services für Informationen über verfügbare zertifiziert chemischen und physikalischen Analyse Techniken wie MS - ICP, X-Ray Diffraction, PSD und Fläche (BET) Analyse. Hafnium was first discovered by Dirk Coster in 1923.
Abundance. The following table shows the abundance of hafnium and each of its naturally occurring isotopes on Earth along with the atomic mass for each isotope. |
hafnium
Hafnium
afnio
Háfnio
hafnio
HafniumIsotope |
Atomic Mass |
% Abundance on Earth |
Hf-174 |
173.940040 |
0.162 |
Hf-176 |
175.941402 |
5.206 |
Hf-177 |
176.943220 |
18.606 |
Hf-178 |
177.943698 |
27.297 |
Hf-179 |
178.945815 |
13.629 |
Hf-180 |
179.946549 |
35.100 |
Safety Data. The safety data for hafnium metal, nanoparticles and its compounds can vary widely depending on the form. For potential hazard information, toxicity, and road, sea and air transportation limitations, such as DOT Hazard Class, DOT Number, EU Number, NFPA Health rating and RTECS Class, please see the specific material or compound referenced in the left margin.
Ionisation Energie. Die Ionisierungenergie für hafnium (die am wenigsten Energie benötigt, um ein einzelnes Elektron aus dem Atom in seinem Grundzustand in der Gasphase) ist in der folgenden Tabelle dargestellt: |
1st Ionization Energy |
658.52 kJ mol-1 |
2nd Ionization Energy |
1437.64 kJ mol-1 |
3rd Ionization Energy |
2248.12 kJ mol-1 |
Conductivity. As to hafnium's electrical and thermal conductivity, the electrical conductivity measured as to electrical resistivity @ 20 ºC is 33.08 μΩcm and its electronegativities (or its ability to draw electrons relative to other elements) is 1.3. The thermal conductivity of hafnium is 23 W m-1 K-1.
Thermal Properties. The melting point and boiling point for hafnium are stated below. The following chart sets forth the heat of fusion, heat of vaporization and heat of atomization. |
Heat of Fusion |
25.5 kJ mol-1 |
Heat of Vaporization |
570.7 kJ mol-1 |
Heat of Atomization |
618.9 kJ mol-1 |
| Formula | Atomic Number | Molecular Weight | Electronegativity (Pauling) | Density | Melting Point | Boiling Point |
Vanderwaals radius |
Ionic radius | Energy of first ionization |
| Hf | 72 | 178.49 g.mol -1 | 1.3 | 13.07 g.cm-3 at 20 °C | 2200 °C | 5200 °C | 200.pm | 0.075 nm (+4) | 658.52 kJ.mol-1 |
| PRODUCT CATALOG | German Operations | Submicron & Nanopowder | Tolling | Ultra High Purity | Sputtering Target | Crystal Growth | Rod, Plate, Powder, etc. | Foil |
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