Hafnium is replacing polysilicon as the principle gate or electrode material in metal oxide semiconductor field effect transistors (MOSFETs) which are the basis for all modern semiconductors. As semiconductors have gotten smaller, the limiting factor in further size reduction has been the ability of the silicon oxide gate to perform below 10 angstroms where leakage occurs. Recent research has been devoted to the development of High-k materials which can function as a di-electric barrier or gate with lower leakage. Using hafnium based alloys as this di-electric gate has allowed for the development of MOSFET gates smaller than 10 angstroms. This allows for further size reduction, reduced switching power requirements and improved performance.

American Elements metal and rare earth compound solutions have numerous applications, but are commonly used in petrochemical cracking and automotive catalysts, water treatment, plating, textiles, research and in optic, laser, crystal and glass applications. Ultra high purity and high purity compositions improve both optical quality and usefulness as scientific standards. Nanoscale (See also Nanotechnology Information and Quantum Dots) elemental powders and suspensions, as alternative high surface area forms, may be considered. We also produce Hafnium Chloride. Additional technical, research and safety (MSDS) information is available.

Hafnium is a Block D, Group 4, Period 6 element. The electronic configuration is [Xe] 4f¹⁴ 5d² 6s². In its elemental form hafnium's CAS number is 7440-58-6. The hafnium atom has a radius of 156.4.pm and it's Van der Waals radius is 200.pm.