7440-58-6
| Product | Product Code |
Order or Specifications |
99% Hafnium Pieces |
HF-M-02-PCS |
 |
99.5% Hafnium Pieces |
HF-M-025-PCS |
|
99.9%
Hafnium Pieces |
HF-M-03-PCS |
|
99.95% Hafnium Pieces |
HF-M-035-PCS |
|
99.99% Hafnium Pieces |
HF-M-04-PCS |
|
99.999% Hafnium Pieces |
HF-M-05-PCS |
|
and smallest possible average grain sizes for use in Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes including Thermal and Electron Beam (E-Beam) Evaporation, Low Temperature Organic Evaporation, Atomic Layer Deposition (ALD), Metallic-Organic and Chemical Vapor Deposition (MOCVD). Our standard Pieces sizes average in the range of 3 mm, 4 -5 mm, 100 - 150 mm, 1/8" and 1/4". We can also provide Pieces and Shot outside this range. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles (See also application discussion at Nanotechnology Information and at Quantum Dots) and in the form of solutions and organometallics.
Hafnium is replacing polysilicon as the principle gate or electrode material in metal oxide semiconductor field effect transistors (MOSFETs) which are the basis for all modern semiconductors. As semiconductors have gotten smaller, the limiting factor in further size reduction has been the ability of the silicon oxide gate to perform below 10 angstroms where leakage occurs. Recent research has been devoted to the development of High-k materials which can function as a di-electric barrier or gate with lower leakage. Using hafnium based alloys as this di-electric gate has allowed for the development of MOSFET gates smaller than 10 angstroms. This allows for further size reduction, reduced switching power requirements and improved performance.
See research below. We also produce Hafnium as rod, ingot, powder, pellets, disc, granules, wire, and in compound forms, such as oxide. Other shapes are available by request.
Hafnium is a Block D, Group 4, Period 6 element. The electronic configuration is [Xe] 4f14 5d2 6s2. In its elemental form hafnium's CAS number is 7440-58-6. The hafnium atom has a radius of 156.4.pm and it's Van der Waals radius is 200.pm.
| Formula | CAS No. | Appearance | Molecular Weight |
| Hf | 7440-58-6 | silver | 178.49 |
| PRODUCT CATALOG | Submicron & Nanopowder | Tolling | Ultra High Purity | Sputtering Target | Crystal Growth | Rod, Plate, Powder, etc. |
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