American Elements
Hafnium Oxide Pieces
HfO2
12055-23-1
Product
Product Code
Order or Specifications
99% Hafnium Oxide Pieces
HF-OX-02-PCS
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99.5% Hafnium Oxide Pieces
HF-OX-025-PCS
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99.9% Hafnium Oxide Pieces
HF-OX-03-PCS
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99.95% Hafnium Oxide Pieces
HF-OX-035-PCS
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99.99% Hafnium Oxide Pieces
HF-OX-04-PCS
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99.999% Hafnium Oxide Pieces
HF-OX-05-PCS
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American Elements specializes in producing high purity irregular shaped Hafnium Oxide Pieces with the highest possible density and smallest possible average grain sizes for use in Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes including Thermal and Electron Beam (E-Beam) Evaporation, Low Temperature Organic Evaporation, Atomic Layer Deposition (ALD), Metallic-Organic and Chemical Vapor Deposition (MOCVD). Our standard Pieces sizes average in the range of 3 mm, 4 -5 mm, 100 - 150 mm, 1/8" and 1/4". We can also provide Pieces outside this range.

Hafnium is replacing polysilicon as the principle gate or electrode material in metal oxide semiconductor field effect transistors (MOSFETs) which are the basis for all modern semiconductors. As semiconductors have gotten smaller, the limiting factor in further size reduction has been the ability of the silicon oxide gate to perform below 10 angstroms where leakage occurs. Recent research has been devoted to the development of High-k materials which can function as a di-electric barrier or gate with lower leakage. Using hafnium based alloys as this di-electric gate has allowed for the development of MOSFET gates smaller than 10 angstroms. This allows for further size reduction, reduced switching power requirements and improved performance.

We also produce Hafnium Oxide as pellets, tablets, powder, and sputtering target. Oxide compounds are not conductive to electricity. See research below. Other shapes are available by request.

Hafnium is a Block D, Group 4, Period 6 element. The electronic configuration is [Xe] 4f14 5d2 6s2. In its elemental form hafnium's CAS number is 7440-58-6. The hafnium atom has a radius of 156.4.pm and it's Van der Waals radius is 200.pm.

Formula CAS No. Appearance Molecular Weight
HfO2 12055-23-1 White 210.49
PRODUCT CATALOG Submicron & Nanopowder Tolling Ultra High Purity Sputtering Target Crystal Growth Rod, Plate, Powder, etc.
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Recent Research & Development for Hafnium Oxide

  • Self-assembly and crystallization behavior of mesoporous, crystalline HfO2 thin films: a model system for the generation of mesostructured transition-metal oxides.
    Small. 2005 Aug;1(8-9):889-98.

  • Guanidinate-Stabilized Monomeric Hafnium Amide Complexes as Promising Precursors for MOCVD of HfO2.
    Inorg Chem. 2006 Dec 25;45(26):11008-18.

  • A stable Schrock-type hafnium-silylene complex.
    J Am Chem Soc. 2006 Dec 20;128(50):16024-5. No abstract available.

  • Dinitrogen functionalization with bis(cyclopentadienyl) complexes of zirconium and hafnium.
    Dalton Trans. 2007 Jan 7;(1):16-25. Epub 2006 Nov 23.

  • Recent progress in polar stationary phases for CEC.
    Electrophoresis. 2006 Nov 29; [Epub ahead of print]

  • Antimony-antimony bond formation by reductive elimination from a hafnium bis(stibido) complex.
    Inorg Chem. 2006 Nov 27;45(24):9625-7.

  • Analysis of FT-IR spectra of dicyclopentadienyl (bis-substituted cyclopentadienyl) dithiocyano of titanium, zirconium and hafnium.
    Spectrochim Acta A Mol Biomol Spectrosc. 2006 Sep 24; [Epub ahead of print]

  • Syntheses and X-ray crystal structures of zirconium(IV) and hafnium(IV) complexes containing monovacant wells-Dawson and Keggin polyoxotungstates.
    Inorg Chem. 2006 Oct 2;45(20):8108-19.

  • N-C bond formation promoted by a hafnocene dinitrogen complex: comparison of zirconium and hafnium congeners.
    J Am Chem Soc. 2006 Aug 23;128(33):10696-7. No abstract available.

  • Group 4 transition-metal atom reactions with CS2 and OCS: infrared spectra and density functional calculations of SMCS, SM-(eta2-CS), SMCO, and OMCS in solid argon.
    J Phys Chem A Mol Spectrosc Kinet Environ Gen Theory. 2006 Nov 30;110(47):12785-92.

 

 

 

 

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