American Elements
Tellurium Rod
Te
13494-80-9
Product
Product Code
Order or Specifications
99% Tellurium Rod
TE-M-02-R
Contact American Elements
99.9% Tellurium Rod
TE-M-03-R
Contact American Elements
99.99% Tellurium Rod
TE-M-04-R
Contact American Elements
99.999% Tellurium Rod
TE-M-05-R
Contact American Elements
American Elements specializes in producing high purity uniform shaped Tellurium Rod with the highest possible density and smallest possible average grain sizes for use in semiconductor, Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes including Thermal and Electron Beam (E-Beam) Evaporation, Low Temperature Organic Evaporation, Atomic Layer Deposition (ALD), Metallic-Organic and Chemical Vapor Deposition (MOCVD). Our standard Rod sizes range from 1/8" x 1/8" to 1/4" x 1/4" and 3 mm diameter. We can also provide Rod outside this range and deposition materials for specific applications such as fuel cells and solar energy. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles (See also application discussion at Nanotechnology Information and at Quantum Dots) and in the form of solutions and organometallics. We have a variety of standard sized rod molds.. See research below. We also produce Tellurium as powder, ingot, pieces, pellets, disc, granules, wire, and in compound forms, such as oxide. Other shapes are available by request.

Tellurium is a Block P, Group 16, Period 5 element. The electronic configuration is [Kr] 4d10 5s2 5p4. In its elemental form tellurium's CAS number is 13494-80-9. The tellurium atom has a radius of 143.2.pm and it's Van der Waals radius is 206.pm. Tellurium is a p-type semiconductor, and shows greater conductivity in certain directions, depending on alignment of the atoms. It is grown in crystalline form with other elements such as indium telluride. Its conductivity increases slightly with exposure to light which makes many tellurides candidates for solar energy applications. . Tellurium improves the machinability of copper and stainless steel, and its addition to lead decreases the corrosive action of sulfuric acid on lead and improves its strength and hardness. Tellurium is used as a basic ingredient in blasting caps, and is added to cast iron for chill control. Tellurium is used in ceramics.

Formula CAS No. Appearance Molecular Weight
Te 13494-80-9 Black 127.60
PRODUCT CATALOG Submicron & Nanopowder Tolling Ultra High Purity Sputtering Target Crystal Growth Rod, Plate, Powder, etc.

© 2001-2007. American Elements is a U.S. Registered Trademark. All rights reserved.
This website and all pages, designs, concepts, logos, and color schemes herein are
the copyrighted proprietary rights and intellectual property of American Elements.

 

Recent Research & Development for Tellurium

  • Effects of selenium and tellurium on the activity of selenoenzymes glutathione peroxidase and type I iodothyronine deiodinase, trace element thyroid level, and thyroid hormone status in rats. Biol Trace Elem Res. 2007 Summer;117(1-3):105-14.

  • Comment on high-quality luminescent tellurium nanowires of several nanometers in diameter and high aspect ratio synthesized by a poly (vinyl pyrrolidone)-assisted hydrothermal process. Langmuir. 2007 Oct 9;23(21):10873. Epub 2007 Sep 13. No abstract available.

  • Structural Integration of Tellurium Oxide into Mixed-Network-Former Glasses: Connectivity Distribution in the System NaPO(3)-TeO(2). Chemphyschem. 2007 Sep 17;8(13):1988-1998.

  • Excitation and circular dichroism spectra of (-)-(3aS, 7aS)-2-chalcogena-trans-hydrindans(Ch = S, Se, Te): SAC and SAC-CI calculations. J Comput Chem. 2007 Aug 22; [Epub ahead of print]

  • Gender-dependent effects of selenite on the perfused rat heart: a toxicological study. Biol Trace Elem Res. 2007 Jun;116(3):301-10.

  • The bacterial response to the chalcogen metalloids se and te. Adv Microb Physiol. 2007;53:1-312.

  • Charge density waves in the square nets of tellurium of AMRETe4 (A = K, Na; M = Cu, Ag; RE = La, Ce). J Am Chem Soc. 2007 Sep 5;129(35):10675-7. Epub 2007 Aug 14. No abstract available.

  • Octa-O-bis-(R,R)-Tartarate Ditellurane (SAS)-a Novel Bioactive Organotellurium(IV) Compound: Synthesis, Characterization, and Protease Inhibitory Activity. ChemMedChem. 2007 Aug 6; [Epub ahead of print]

  • Telluroselenophosphonium ions: their unusual soft-soft interactions with iodotellurate anions. Dalton Trans. 2007 Aug 28;(32):3483-5. Epub 2007 Jun 28.

  • ZnTe6O13, a new ZnO-TeO2 phase. Acta Crystallogr C. 2007 Aug;63(Pt 8):i66-8. Epub 2007 Jul 14.

  • Large scale synthesis of highly pure single crystalline tellurium nanowires by thermal evaporation method.
    J Nanosci Nanotechnol. 2006 Nov;6(11):3380-3.

  • Telluroxides exhibit hydrolysis capacity.
    J Org Chem. 2007 Jan 19;72(2):606-9.

  • A general in situ hydrothermal rolling-up formation of one-dimensional, single-crystalline lead telluride nanostructures.
    Small. 2005 Mar;1(3):349-54.

  • Catalases Are NAD(P)H-Dependent Tellurite Reductases.
    PLoS ONE. 2006 Dec 20;1:e70.

  • Vaporization thermodynamic studies by high-temperature mass spectrometry on some three-phase regions over the MnO-TeO2 binary line in the Mn-Te-O ternary system.
    J Phys Chem A Mol Spectrosc Kinet Environ Gen Theory. 2006 Dec 28;110(51):13705-11.

  • Synthesis, properties, and reactions of a series of stable dialkyl-substituted silicon-chalcogen doubly bonded compounds.
    J Am Chem Soc. 2006 Dec 27;128(51):16914-20.

  • A new binary compound for the production of (124)I via the (124)Te(p,n)(124)I reaction.
    Appl Radiat Isot. 2006 Dec 13; [Epub ahead of print]

  • Bismuth telluride (Bi2Te3) nanowires: synthesis by cyclic electrodeposition/stripping, thinning by electrooxidation, and electrical power generation.
    Langmuir. 2006 Dec 5;22(25):10564-74.

  • Tellurium adatoms as an in-situ surface probe of (111) two-dimensional domains at platinum surfaces.
    Langmuir. 2006 Dec 5;22(25):10329-37.

  • Pure white-light emission of nanocrystal-polymer composites.
    Chemphyschem. 2006 Dec 11;7(12):2492-6. No abstract available.

 

 

 

 

American Elements Products can also be sourced at these sites:
 
 
 
electronics-ee.com